GFP70N03 |
RFQ for GFP70N03 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| GFP70N03 | - | TO-220 | 01+ |
Features |
| • Advanced Process Technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for Low Voltage DC/DC Converters• Fast Switching for High Efficiency |
| Parameter |
Symbol |
Limit |
Unit |
| Drain-Source Voltage |
VDS |
30 |
V |
| Gate-Source Voltage |
VGS |
±20 | |
| Continuous Drain Current(1) |
ID |
70 |
A |
| Pulsed Drain Current |
IDM |
200 | |
| Maximum Power Dissipation TC = 25°C TC = 100°C |
PD |
62.5 25 |
W |
| Operating Junction and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Lead Temperature (1/8" from case for 5 sec.) |
TL |
275 |
°C |
| Junction-to-Case Thermal Resistance |
RJC |
2.0 |
°C/W |
| Junction-to-Ambient Thermal Resistance |
RJA |
62.5 |
°C/W |
